期刊論文 | 研討會論文 | 專利 | 專書

期刊論文

1. Mingte Lin, Kai Wei Yang and Ya-Chin King, "Evaluation of Stability and Robustness of Poly-Si Resistors with Different Dopant Concentrations", in Japanese Journal of Applied Physics, Volume 61, SC1060, 24 February 2022, (IF:1.491) (SCI).

2. Mingte Lin and Ya-Chin King, "A Study of the Nonlinear Capacitance Variation in Inter Level Copper and Low-k Interconnect Structure," in IEEE Transactions on Device and Materials Reliability, vol. 21, no. 2, pp. 207-214, June 2021, (IF:2.64) (SCI).

3. Mingte Lin, J. Liang, C. J. Wang, A. Juan and K. C. Su, "Polarity Dependence of the Conduction Mechanism in Inter level Low-k Dielectrics," in IEEE Electron Device Letters, vol. 33, no. 7, pp. 1066-1068, July 2012,( (IF:4.8) (SCI).

4. Mingte Lin and K. C. Su, "Correlation Between TDDB and VRDB for Low- k Dielectrics with Square Root E Model," in IEEE Electron Device Letters, vol. 31, no. 5, pp. 494-496, May 2010 (IF:4.816) (SCI)

5. Mingte Lin , James W. Liang and Kuan Chen Su, "Experiments and Simulation of Stress Induced Voiding Dependence on Upper Metal Cap Layer in Cu/Low-k Interconnects," Japanese Journal of Applied Physics 48 (2009) 04C027, 2009 (IF=1.5) (SCI)

6. M.H. Lin, Mingte Lin, Tahui Wang, "Effects of length scaling on electromigration in dual-damascene copper interconnects," Microelectronics Reliability, Vol. 48, 4, pp. 569-577, 2008(IF:1.4) (SCI)

研討會論文

1. Mingte Lin and Ya-Chin King, “Stability and Robustness Evaluation for Poly-Si Resistors with Different Dopant Concentrations,” Ext. Abstr. Int. Conf. Solid State Device and Materials (SSDM), p. 648 (Oral)
2. Mingte Lin, C. Yang, H. -Y. Chen, A. Juan, K. C. Su and Ya-Chin King, "Evaluation of inter and intra level TDDB of Cu/Low-k interconnect for high voltage application," 2016 IEEE International Reliability Physics Symposium (IRPS), 2016, pp. DI-6-1-DI-6-4. (Oral)
3. Mingte Lin, J. Liang, A. Juan and K. C. Su, "Electrical properties of low-k dielectric in copper interconnect structures," Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2013, pp. 208-211. (Oral)
4. Mingte Lin, J. Liang, A. Juan and K. C. Su, "Polarity Dependence on Electrical Properties of Low-k Dielectric in Copper Interconnect Structures," Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, Fukuoka, 2013, pp854-855 (Oral)
5. Mingte Lin, J. W. Liang, C. J. Wang, A. Juan and K. C. Su, "Polarity dependence of the conduction mechanism in inter-level low-k dielectrics," 2012 IEEE International Reliability Physics Symposium (IRPS), 2012, pp. BD.5.1-BD.5.4 (Poster)
6. C. Huang, Mingte Lin, J. W. Liang, A. Juan and K. C. Su, "Degradation and failure analysis of Polysilicon Resistor connecting with Tungsten contact and Copper line," 2011 International Reliability Physics Symposium, 2011, pp. EM.1.1-EM.1.3 (Poster)
7. Mingte Lin, J. W. Liang and K. C. Su, "New voltage ramp dielectric breakdown methodology based on square root E model for Cu/low-k interconnect reliability," 2010 IEEE International Reliability Physics Symposium, 2010, pp. 556-561 (Oral)
8. Mingte Lin, N. Jou, J. W. Liang and K. C. Su, "Effect of multiple via layout on electromigration performance and current density distribution in copper interconnect," 2009 IEEE International Reliability Physics Symposium, 2009, pp. 844-847  (Poster)
9. Mingte Lin, N. Jou, J. W. Liang, A. Juan and K. C. Su, "Upstream electromigration study on multiple via structures in copper interconnect," 2009 IEEE International Interconnect Technology Conference, 2009, pp. 86-88  (Poster)
10. Mingte Lin, J. W. Liang and K. Su, "Stress Characterization for Stress-Induced Voiding in Cu/Low K Interconnects with Geometry and Upper Cap Layer Dependences," 2008 IEEE International Integrated Reliability Workshop Final Report, 2008, pp. 32-35 (Oral)
11. Mingte Lin, James W. Liang and Kuan Chen Su, "Experiments and simulation of stress induced voiding dependence on upper metal cap layer in Cu/Low k interconnect, " International Conference on Solid State Devices and Materials, Tsukuba, Japan, Page(s): 392 -393 (2008)  (Oral)
12. M.H. Lin, G.S. Yang, Y.L. Lin, Mingte. Lin, C.C. Lin, M.S. Yeh, K.P. Chang, K.C. Su, J.K. Chen, Y.J. Chang,Tahui Wang, "A practical methodology for multi-modality electromigration lifetime prediction," IEEE International Integrated Reliability Workshop Final Report, 2002, pp. 50-54. (Oral)

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