研究著作

期刊論文 | 研討會論文 | 專利 | 專書

期刊論文

Po-Hsun Chen, Chun-Chu Lin, Min-Chen Chen, Li-Chuan Sun, Chung-Wei Wu, Sheng-Yao Chou, Tsung-Ming Tsai, Ting-Chang Chang*, “Utilizing sulfuration of supercritical fluid treatment to improve sensitivity and humidity resistance of chip-type gas sensors”, Sensors and Actuators B: Chemical, 404, 135273, Apr. 2024. (IF 8) (SCI)
Po-Hsun Chen*, Yu-Zhe Zheng, Tsung-Han Yeh, Tzu-Yun Nieh, “Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure”, Journal of Physics D: Applied Physics, 56, 435101, Jul. 2023. (IF 3.1) (SCI)
Po-Hsun Chen*, Hong-Chih Chen, Chuan-Wei Kuo, Jian-Jie Chen, Hui-Chun Huang, “Function of a Dual-Active-Layer Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistor with Ultraviolet-Induced Effects”, ACS Applied Electronic Materials, 5(4), 2065-2072, Apr. 2023. (IF 4.3) (SCI)
Po-Hsun Chen*, Yu-Ting Su, Wei-Chen Huang, Chung-Wei Wu, “Improving High Resistance State in One-Transistor-One-Resistor (1T1R) Structure Resistance Random Access Memory with a Body-Biased Method”, IEEE Transactions on Electron Devices, 70(3), 1014-1018, Mar. 2023. (IF 2.9) (SCI)
Po-Hsun Chen, Chih-Yang Lin, Ting-Chang Chang*, Jason K. Eshraghian, Yu-Ting Chao, Wei D. Lu, Simon M. Sze, “Investigating Selectorless Property within Niobium Devices for Storage Applications”, ACS Applied Materials & Interfaces, 14(1), 2343-2350, Jan. 2022. (IF 8.3) (SCI)
Po-Hsun Chen*, Chen-Yi Hsieh, Yu-Ting Su, “Investigation of Abnormal Forming Process Current Caused by Copper Diffusion in Cu/GeSO/TiN Resistance Random Access Memory”, Materials Chemistry and Physics, 267, pp 124654, Jul. 2021. (IF 4.3) (SCI)
Po-Hsun Chen, Chih-Yang Lin, Jing-Shuen Chang, Yi-Ting Tseng, Jen-Wei Huang, “Enhanced switching performance of resistance random access memories by an inserted copper tellurium layer”, Journal of Physics D: Applied Physics, 54(16), 165110, Apr. 2021. (IF 3.1) (SCI)
Po-Hsun Chen*, Chen-Yi Hsieh, Hong-Yi Yang, “Effects of Charge Quantity Induced by Different Forming Methods in Solid Electrolyte GeSO-Based Resistance Switching Device with Copper Electrode”, IEEE Transactions on Electron Devices, 67(6), 2324-2328, Jun. 2020. (IF 2.9) (SCI)
Po-Hsun Chen*, Hao-Xuan Zheng, Yu-Ting Su, “Incorporation of a bipolar incremental step pulse programming with thermal forming to reduce the forming voltage in 1T1R structure resistance random access memory”; Applied Physics Express, 13(5), 056503, May 2020. (IF 2.3) (SCI)
Po-Hsun Chen*, Hong-Yi Yang, Yu-Ting Su, Chia-Min Tsou, “Fully-Transparent Resistance Switching Memristor Based on Indium-Tin-Oxide Material”, Journal of Micromechanics and Microengineering, 30(4), 045003, Feb. 2020. (IF 2.4) (SCI)

研討會論文

專利

編號	發明人	專利名稱(中文)	專利名稱(英文)	專利國別	領證年度
1	張鼎張、蔡育霖、曹俞慶、陳宏誌、黃馨平、戴茂洲、陳柏勳	薄膜電晶體的製造方法	METHOD FOR MANUFACTURING THIN FILM TRANSISTOR	中華民國	111
2	張鼎張、曾懿霆、林俊曲、陳穩仲、陳柏勳、林仕鎧	氣體感測器製造方法	METHOD FOR MANUFACTURING GAS SENSOR	中華民國	110
3	張鼎張、曹俞慶、蔡育霖、陳柏勳、林妤珊、陳穩仲	提升高電子移動率電晶體的崩潰電壓之結構	A STRUCTURE TO INCREASE BREAKDOWN VOLTAGE OF HIGH ELECTRON MOBILITY TRANSISTOR	中華民國	110
4	張鼎張、張冠張、蔡宗鳴、潘致宏、陳柏勳	電阻式記憶體	RESISTIVE RANDOM ACCESS MEMORY	中華民國	108
5	Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Hung Pan, Po-Hsun Chen		RESISTIVE RANDOM ACCESS MEMORY,	美國	107

專書

編號	著作名稱

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